Northrop Grumman Engineer Microelec Semiconductor 4 in Baltimore, Maryland

Engineer Microelec Semiconductor 4

Requisition ID: 18004396

Location(s): United States-Maryland-Baltimore

US Citizenship Required for this Position: Yes

Relocation Assistance: Relocation assistance may be available

Travel: Yes, 10 % of the Time

The Advanced Technologies group of NorthropGrumman Mission Systems is seeking an independent and resourceful SemiconductorEngineer 4- Materials Development for our Advanced Technology Lab (ATL) -located outside of Baltimore, Maryland - where we design, manufacture, and testsemiconductor products for internal and commercial production customers as wellas emerging technology programs. Northrop Grumman’s ATL semiconductor foundryis a unique capability supporting a range of production microelectronic devices(Silicon, Gallium Arsenide, Gallium Nitride, Silicon Carbide, Carbon Nanotubes)and providing leading edge technology development in superconductingelectronics. Our devices enable a number of Northrop Grumman’s ground based radars,airborne radars, and space systems. Join us for the chance to work with anexperienced and talented team while helping serve your country. Enjoy theopportunity to grow and learn with a variety of challenging projects in production,R&D, ongoing long-term programs, and new programs targeting future militaryplatforms.

The Materials Development engineer isresponsible for the design, development, improvement, and testing of novel /complex thin film materials. The individual will interface with multipleresearch programs to solve complex technical challenges. The candidatemust be capable of working in a fast paced environment while developingsolutions to multiple areas including superconducting, III-V, Si, and carbonbased electronics.

Basic Qualifications:

  • Ph.D. in Chemistry, Materials Science, Electrical Engineering, or a similar discipline with at least 3 years of experience in materials development in a semiconductor environment.

  • Proven track record of innovative research in novel / complex dielectrics.

  • Familiarity with thin film characterization techniques (AFM, XRD, XRR, optical spectroscopy, etc.)

  • Excellent communication skills both verbal and written and the ability to work in a team environment.

  • Significant experience with dielectric and metal CVD / ALD process development and optimization.

Preferred Qualifications:

  • Product development experience

  • Previous principal investigator / project manager experience

  • 8 or more years’ experience in materials development (including graduate work)

  • Publications and presentations

  • Previous IP development

  • Ability to obtain and maintain Top Secret / SCI clearance

Northrop Grumman is committed to hiring and retaining a diverse workforce. We are proud to be an Equal Opportunity/Affirmative Action Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO/AA and Pay Transparency statement, please visit . U.S. Citizenship is required for most positions.

Title: Engineer Microelec Semiconductor 4

Location: Maryland-Baltimore

Requisition ID: 18004396